BUK9618-55A,118 NXP Semiconductors, BUK9618-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9618-55A,118
• Description: MOSFET N-CH 55V 61A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9618-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 61 A
• Power Dissipation: 136000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056812118; BUK9618-55A /T3; BUK9618-55A /T3

NXP Semiconductors
BUK9618-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
5
V
DD
10
= 14 V
15
20
(A)
I
S
100
V
25
80
60
40
20
DD
0
0
= 44 V
All information provided in this document is subject to legal disclaimers.
30
Q
03ne41
G
0.2
(nC)
Rev. 02 — 16 February 2011
35
T
j
= 175 °C
0.4
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
0.8
4500
4000
3500
3000
2500
2000
1500
1000
500
T
0
j
as a function of drain-source voltage; typical
values
10
= 25 °C
−2
1.0
V
03ne40
SD
N-channel TrenchMOS logic level FET
(V)
1.2
10
−1
BUK9618-55A
1
C
C
C
iss
oss
rss
10
© NXP B.V. 2011. All rights reserved.
V
DS
03ne47
(V)
10
2
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