BUK9575-100A,127 NXP Semiconductors, BUK9575-100A,127 Datasheet

MOSFET N-CH 100V 23A TO220AB

BUK9575-100A,127

Manufacturer Part Number
BUK9575-100A,127
Description
MOSFET N-CH 100V 23A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9575-100A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
72 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
1704pF @ 25V
Power - Max
98W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.072 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
23 A
Power Dissipation
98000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056118127
BUK9575-100A
BUK9575-100A
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
TO220AB and SOT404 . Using
’trench’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general
applications.
PINNING
TO220AB & SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
October 2000
Philips Semiconductors
TrenchMOS
Logic level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
R
tab/mb drain
D
D
DM
V
stg
DS
DGR
tot
th j-mb
th j-a
th j-a
PIN
GS
1
2
3
, T
j
envelope
DESCRIPTION
gate
drain
source
purpose
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
available
transistor
switching
in
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
1
2
3
SOT404
BUK9675-100A
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
-
in free air
Minimum footprint, FR4
board
mb
mb
mb
mb
mb
GS
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1
tab
TO220AB
BUK9575-100A
1 2 3
V
V
GS
GS
= 10 V
= 5 V
SYMBOL
TYP.
MIN.
- 55
60
50
-
-
-
-
-
-
-
-
g
MAX.
Product specification
BUK9575-100A
BUK9675-100A
100
175
23
99
75
55
MAX.
MAX.
100
100
175
1.5
15
23
16
91
98
-
-
d
s
Rev 1.200
UNIT
UNIT
K/W
K/W
K/W
UNIT
˚C
W
m
m
V
V
V
A
A
A
˚C
W
V
A

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BUK9575-100A,127 Summary of contents

Page 1

... R Drain-source on-state DS(ON) resistance PIN CONFIGURATION tab SOT404 TO220AB BUK9575-100A BUK9675-100A CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS - in free air Minimum footprint, FR4 board 1 Product specification BUK9575-100A BUK9675-100A MAX. 100 23 99 175 SYMBOL MIN. MAX. - 100 - 100 - 175 TYP. MAX ...

Page 2

... Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK9575-100A BUK9675-100A MIN. TYP. MAX. UNIT 100 - - 1.5 2 ...

Page 3

... 100 ID/A 10 120 140 160 180 = f Zth/(K/ 0.1 0.01 1E-07 120 140 160 180 Product specification BUK9575-100A BUK9675-100A MIN. TYP ˚C mb RDS(ON)=VDS/ 1us 10us 100us DC 1ms 10ms 100 VDS/V Fig.3. Safe operating area & f single pulse; parameter 0.5 0.2 0.1 ...

Page 4

... Fig.8. Typical on-state resistance 4.2 ID/A 4.4 4.6 4.8 5 ˚ gfs ˚C. Fig.10. Typical transconductance Product specification BUK9575-100A BUK9675-100A VGS f(V ); conditions: I DS(ON Tj/C= 175 0.0 1.0 2.0 VGS/V Fig.9. Typical transfer characteristics conditions parameter ...

Page 5

... GS) j October 2000 100 150 200 = VGS / V 100 150 200 Fig.15. Typical turn-on gate-charge characteristics mA Sub-Threshold Conduction IF/A 98 Product specification BUK9575-100A BUK9675-100A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.01 0 VDS/V Fig.14. Typical capacitances f(V ); conditions MHz VDS = 14V f(Q ) ...

Page 6

... Fig.19. Maximum permissible repetitive avalanche current VDD + VDS - VGS -ID/100 T.U. shunt BV V DSS DD 6 Product specification BUK9575-100A BUK9675-100A 25ºC 25º 25º prior to avanche 150ºC Tj prior to avanche 150ºC Tj prior to avalanche 150º 0.001 0.001 0.001 0.01 0.01 ...

Page 7

... Epoxy meets UL94 V0 at 1/8". October 2000 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.21. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK9575-100A BUK9675-100A 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.200 15,8 max ...

Page 8

... Epoxy meets UL94 V0 at 1/8". October 2000 2 scale max. 0.85 0.64 1.60 10.30 2.90 15.40 11 2.54 0.60 0.46 1.20 9.70 2.10 14.80 REFERENCES IEC JEDEC EIAJ 8 Product specification BUK9575-100A BUK9675-100A 2 -PAK); 3 leads SOT404 mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 Rev 1.200 ...

Page 9

... Philips for any damages resulting from such improper use or sale. October 2000 11.5 9.0 2.0 3.8 5.08 Fig.23. SOT404 : soldering pattern for surface mounting. 9 Product specification BUK9575-100A BUK9675-100A 17.5 Rev 1.200 ...

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