BUK9240-100A/C1,11 NXP Semiconductors, BUK9240-100A/C1,11 Datasheet - Page 3

• Manufacturer Part Number: BUK9240-100A/C1,11
• Description: MOSFET N-CH 100V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9240-100A/C1,11

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 3072pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Gate Charge (qg) @ Vgs: -

Philips Semiconductors
9397 750 07573
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
amb
der
function of mounting base temperature.
P der
(%)
= 25 C; I
=
----------------------
P
120
100
80
60
40
20
tot 25 C
0
P
0
tot
DM
25
is single pulse.
100%
50
1000
100
I D
(A)
10
1
75
1
P
100
t p
R DSon = V DS / I D
125
T
150
=
t p
T
t
T mb ( o C)
175
03aa16
D.C.
200
Rev. 01 — 03 October 2000
10
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of mounting base temperature.
=
100
4.5 V
I der
------------------ -
I
120
(%)
100
D 25 C
80
60
40
20
t p = 10 us
100 us
1 ms
10 ms
100 ms
0
I
D
0
25
100%
V DS (V)
50
BUK9240-100A
TrenchMOS™ logic level FET
75
100
1000
© Philips Electronics N.V. 2000. All rights reserved.
125
150
T mb ( o C)
175
03aa24
200
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