BUK9240-100A/C1,11 NXP Semiconductors, BUK9240-100A/C1,11 Datasheet - Page 3
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BUK9240-100A/C1,11
Manufacturer Part Number
BUK9240-100A/C1,11
Description
MOSFET N-CH 100V SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9240-100AC111.pdf
(13 pages)
Specifications of BUK9240-100A/C1,11
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Gate Charge (qg) @ Vgs
-
Philips Semiconductors
9397 750 07573
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
amb
der
function of mounting base temperature.
P der
(%)
= 25 C; I
=
----------------------
P
120
100
80
60
40
20
tot 25 C
0
P
0
tot
DM
25
is single pulse.
100%
50
1000
100
I D
(A)
10
1
75
1
P
100
t p
R DSon = V DS / I D
125
T
150
=
t p
T
t
T mb ( o C)
175
03aa16
D.C.
200
Rev. 01 — 03 October 2000
10
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of mounting base temperature.
=
100
4.5 V
I der
------------------ -
I
120
(%)
100
D 25 C
80
60
40
20
t p = 10 us
100 us
1 ms
10 ms
100 ms
0
I
D
0
25
100%
V DS (V)
50
BUK9240-100A
TrenchMOS™ logic level FET
75
100
1000
© Philips Electronics N.V. 2000. All rights reserved.
125
150
T mb ( o C)
175
03aa24
200
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