BUK9240-100A,118 NXP Semiconductors, BUK9240-100A,118 Datasheet - Page 7

MOSFET N-CH 100V 33A DPAK

BUK9240-100A,118

Manufacturer Part Number
BUK9240-100A,118
Description
MOSFET N-CH 100V 33A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK9240-100A,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0386 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
33 A
Power Dissipation
114000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056252118
BUK9240-100A /T3
BUK9240-100A /T3
NXP Semiconductors
BUK9240-100A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
120
100
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
4.0
1
5.0
min
4
V
GS
typ
= 10 (V)
6
2
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
3.0
2.4
DS
(V)
03na66
(V)
10
3
Rev. 02 — 15 June 2010
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
34
32
30
28
26
24
80
60
40
20
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
10
5
BUK9240-100A
20
10
30
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
(V)
(A)
03na64
03na65
15
40
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