BUK9640-100A,118 NXP Semiconductors, BUK9640-100A,118 Datasheet - Page 7

MOSFET N-CH 100V 39A D2PAK

BUK9640-100A,118

Manufacturer Part Number
BUK9640-100A,118
Description
MOSFET N-CH 100V 39A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9640-100A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
158W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.039 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
39 A
Power Dissipation
158000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056025118
BUK9640-100A /T3
BUK9640-100A /T3
NXP Semiconductors
BUK9640-100A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
80
60
40
20
50
45
40
35
30
25
20
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
10
0
20
T
j
= 175 °C
1
30
40
2
V
GS
= 3.0 (V)
50
T
j
= 25 °C
3
All information provided in this document is subject to legal disclaimers.
V
60
GS
I
3.2
3.4
3.6
D
4.0
5.0
03na61
03na67
10
(V)
(A)
70
4
Rev. 04 — 31 May 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
2.8
2.1
1.4
0.7
a
2
1
0
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9640-100A
60
60
max
typ
min
120
120
© NXP B.V. 2010. All rights reserved.
T
03aa33
T
j
j
( ° C)
03ng41
(°C)
180
180
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