BUK9535-55,127 NXP Semiconductors, BUK9535-55,127 Datasheet - Page 5

• Manufacturer Part Number: BUK9535-55,127
• Description: MOSFET N-CH 55V 34A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9535-55,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 17A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Philips Semiconductors
April 1998
TrenchMOS
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-05
VGS/V
V
2.5
2.0
1.5
1.0
0.5
GS
Fig.12. Typical capacitances, C
0
0.01
I
C = f(V
6
5
4
3
2
1
0
D
0
0
= f(Q
= f(V
Fig.11. Sub-threshold drain current.
G
GS)
DS
); conditions: I
0.5
); conditions: V
; conditions: T
5
0.1
2%
transistor
1
10
VDS = 14V
typ
QG/nC
1
D
1.5
= 30 A; parameter V
j
GS
= 25 ˚C; V
VDS/V
Sub-Threshold Conduction
= 0 V; f = 1 MHz
15
98%
2
iss
10
, C
VDS = 44V
DS
20
oss
= V
2.5
, C
GS
rss
100
.
DS
Ciss
Coss
Crss
25
3
5
VGS
IF/A
0
I
100
Fig.15. Normalised avalanche energy rating.
F
80
60
40
20
120
110
100
0
= f(V
90
80
70
60
50
40
30
20
10
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
SDS
DSS
DSS
40
); conditions: V
% = f(T
RGS
0.5 LI
60
0.5
mb
Tj/C =
80
); conditions: I
D
2
BV
VSDS/V
Tmb / C
100
175
GS
DSS
L
= 0 V; parameter T
VDS
120
BV
T.U.T.
Product specification
DSS
1
BUK9535-55
140
D
shunt
= 32 A
R 01
V
DD
25
160
-
+
Rev 1.100
-ID/100
180
VDD
1.5
j