PHP45NQ11T,127 NXP Semiconductors, PHP45NQ11T,127 Datasheet - Page 6

• Manufacturer Part Number: PHP45NQ11T,127
• Description: MOSFET N-CH 105V 47A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP45NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 105V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 105 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058294127::PHP45NQ11T::PHP45NQ11T

NXP Semiconductors
PHP45NQ11T_2
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
10
10
10
10
10
I
D
D
40
30
20
10
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
V
GS
0.5
(V) =
2
10
min
6
1
5.5
typ
4
1.5
max
V
GS
T
V
j
= 25 °C
DS
(V)
03am90
03aa35
(V)
4.8
4.6
4.4
4.2
Rev. 02 — 19 November 2009
5
4
2
6
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
D
50
40
30
20
10
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
N-channel TrenchMOS standard level FET
0
2
175 °C
60
PHP45NQ11T
max
min
typ
4
120
© NXP B.V. 2009. All rights reserved.
T
V
j
GS
T
= 25 °C
j
03am92
(V)
(°C)
03aa32
180
6
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