PH4830L,115 NXP Semiconductors, PH4830L,115 Datasheet - Page 8

• Manufacturer Part Number: PH4830L,115
• Description: MOSFET N-CH 30V 84A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH4830L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 22.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2786pF @ 12V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061157115; PH4830L T/R; PH4830L T/R

NXP Semiconductors
PH4830L_1
Product data sheet
Fig 13. Source current as a function of source-drain
(A)
I
S
80
60
40
20
0
T
voltage; typical values
0
j
= 25 C and 150 C; V
0.3
T
j
= 150 C
0.6
GS
= 0 V
25 C
0.9
V
003aab718
SD
(V)
Rev. 01 — 6 September 2007
1.2
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
V
as a function of drain-source voltage; typical
values
GS
1
= 0 V; f = 1 MHz
N-channel TrenchMOS logic level FET
1
10
PH4830L
© NXP B.V. 2007. All rights reserved.
V
DS
003aab719
C
C
C
(V)
iss
oss
rss
10
2
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