BUK9E08-55B,127 NXP Semiconductors, BUK9E08-55B,127 Datasheet - Page 10

• Manufacturer Part Number: BUK9E08-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9E08-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Gate Charge Qg: 45 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.4 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057717127

NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT226 (I2PAK)
BUK9E08-55B
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT226
4.5
4.1
A
1.40
1.27
A
1
0.85
0.60
b
IEC
D
L
b
1.3
1.0
1
D
1
b
1
0.7
0.4
c
All information provided in this document is subject to legal disclaimers.
TO-262
JEDEC
1
max
e
11
D
E
REFERENCES
2
e
Rev. 03 — 31 May 2010
1.6
1.2
D
1
3
0
b
10.3
9.7
E
L
JEITA
scale
1
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
3.30
2.79
A
L
1
1
N-channel TrenchMOS logic level FET
Q
2.6
2.2
Q
A
PROJECTION
EUROPEAN
c
BUK9E08-55B
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
06-02-14
09-08-25
SOT226
10 of 14