BUK7208-40B,118 NXP Semiconductors, BUK7208-40B,118 Datasheet

MOSFET N-CH 40V 75A DPAK

BUK7208-40B,118

Manufacturer Part Number
BUK7208-40B,118
Description
MOSFET N-CH 40V 75A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7208-40B,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Mounting Type
Surface Mount
Power - Max
167W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
35nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
105 A
Power Dissipation
167000 mW
Maximum Operating Temperature
+ 185 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057607118::BUK7208-40B /T3::BUK7208-40B /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V loads
Automotive systems
Continuous current is limited by package.
BUK7208-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 7 June 2010
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
gate-drain charge
V
T
V
Conditions
T
see
V
T
see
I
R
T
V
see
D
j
mb
j
j(init)
GS
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
= 75 A; V
Figure
Figure 12
Figure 13
= 25 °C; see
= 32 V; T
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 185 °C
mb
j
GS
= 25 °C;
= 25 A;
= 25 A;
≤ 40 V;
Figure
= 25 °C;
= 10 V;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
General purpose power switching
Motors, lamps and solenoids
Figure 2
Figure 3
11;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
6.6
-
11.5
Max Unit
40
75
167
8
242
-
V
A
W
mΩ
mJ
nC

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BUK7208-40B,118 Summary of contents

Page 1

... BUK7208-40B N-channel TrenchMOS standard level FET Rev. 03 — 7 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B Graphic symbol mbb076 Version SOT428 © NXP B.V. 2010. All rights reserved ...

Page 3

... V; see Figure ≤ 10 µs; pulsed; see ° °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B Min Typ Max - - - [ 105 [ [ Figure 420 - - 167 -55 - ...

Page 4

... P (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B N-channel TrenchMOS standard level FET der 100 150 Normalized total power dissipation as a function of mounting base temperature 03nl44 = 10 μ 100 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7208-40B Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B N-channel TrenchMOS standard level FET Min Typ - - - 71.4 03nk52 t p δ ...

Page 6

... °C j measured form source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B Min Typ Max Unit 4 500 µA - 0.02 1 µ ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B N-channel TrenchMOS standard level FET 16 R DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ( ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nl42 10 20 Label is V (V) GS 300 400 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 150 ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 185 ° ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B N-channel TrenchMOS standard level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03nl36 0.9 1.2 V ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9 ...

Page 11

... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data - Objective data - All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B Supersedes BUK7208-40B_2 BUK7208-40B_1 - © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 June 2010 BUK7208-40B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 June 2010 Document identifier: BUK7208-40B ...

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