BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 2

MOSFET N-CH 55V 35A SOT404

BUK7635-55A,118

Manufacturer Part Number
BUK7635-55A,118
Description
MOSFET N-CH 55V 35A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK7635-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
872pF @ 25V
Power - Max
85W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
85000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056192118
BUK7635-55A /T3
BUK7635-55A /T3
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07646
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
DSS
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
Rev. 01 — 10 November 2000
Conditions
T
T
V
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
mb
mb
mb
mb
mb
mb
mb
mb
GS
DS
T
T
GS
j
j
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 25 C
= 175 C
BUK7535-55A; BUK7635-55A
= 20 k
55 V; V
and
mb
= 25 C
D
3
Figure 1
GS
GS
GS
= 20 A
GS
= 10 V; R
= 10 V
= 10 V;
= 10 V;
p
p
10 s
10 s;
GS
Figure 2
D
= 14 A;
= 50 ;
TrenchMOS™ standard level FET
Typ
30
Min
55
55
© Philips Electronics N.V. 2000. All rights reserved.
Max
55
35
85
175
35
70
Max
55
55
35
25
139
85
+175
+175
35
139
49
20
Unit
V
A
W
m
m
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C
C
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