BUK9217-75B,118 NXP Semiconductors, BUK9217-75B,118 Datasheet - Page 4
![MOSFET N-CH 75V 64A DPAK](/photos/5/32/53207/dpak_sml.jpg)
BUK9217-75B,118
Manufacturer Part Number
BUK9217-75B,118
Description
MOSFET N-CH 75V 64A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9217-75B118.pdf
(16 pages)
Specifications of BUK9217-75B,118
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Mounting Type
Surface Mount
Power - Max
167W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
35nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
64A
Drain To Source Voltage (vdss)
75V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
64 A
Power Dissipation
167000 mW
Maximum Operating Temperature
+ 185 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057721118::BUK9217-75B /T3::BUK9217-75B /T3
NXP Semiconductors
BUK9217-75B
Product data sheet
Fig 3.
10
10
(A)
10
I
D
10
-1
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
DC
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 3 February 2011
10
N-channel TrenchMOS logic level FET
100 μs
10 ms
1 ms
2
t
100 ms
p
= 10 μs
BUK9217-75B
V
DS
(V)
© NXP B.V. 2011. All rights reserved.
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