BUK9Y30-75B,115 NXP Semiconductors, BUK9Y30-75B,115 Datasheet - Page 9

• Manufacturer Part Number: BUK9Y30-75B,115
• Description: MOSFET N-CH 75V 34A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y30-75B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 34A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 15A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 34 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058726115::BUK9Y30-75B T/R::BUK9Y30-75B T/R

NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 16. Source current as a function of source-drain voltage; typical values
V
GS
= 0V
(A)
I
S
100
80
60
40
20
0
0
0.3
Rev. 04 — 10 April 2008
T
j
= 175 °C
0.6
T
0.9
j
= 25 °C
V
SD
03no06
(V)
N-channel TrenchMOS logic level FET
1.2
BUK9Y30-75B
© NXP B.V. 2008. All rights reserved.
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