PHB47NQ10T,118 NXP Semiconductors, PHB47NQ10T,118 Datasheet - Page 2

MOSFET N-CH 100V 47A D2PAK

PHB47NQ10T,118

Manufacturer Part Number
PHB47NQ10T,118
Description
MOSFET N-CH 100V 47A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PHB47NQ10T,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
166W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
66nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
47A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
47 A
Power Dissipation
166000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056745118::PHB47NQ10T /T3::PHB47NQ10T /T3
NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
PHB47NQ10T_2
Product data sheet
Pin
1
2
3
mb
Type number
PHB47NQ10T
It is not possible to make a connection to pin 2.
Symbol
G
D
S
D
Pinning information
Ordering information
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
[1]
Simplified outline
SOT404 (D2PAK)
1
N-channel TrenchMOS standard level FET
mb
2
3
PHB47NQ10T
Graphic symbol
mbb076
G
© NXP B.V. 2010. All rights reserved.
Version
SOT404
D
S
2 of 13

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