RSS090P03FU6TB Rohm Semiconductor, RSS090P03FU6TB Datasheet
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Manufacturer Part Number
RSS090P03FU6TB
Description
MOSFET P-CH 30V 9A 8SOIC
Manufacturer
Rohm Semiconductor
Specifications of RSS090P03FU6TB
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
39nC @ 5V
Input Capacitance (ciss) @ Vds
4000pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.014 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
Switching (−30V, −9.0A)
RSS090P03
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC / DC converter.
Silicon P-channel
MOS FET
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
∗
Source current
(Body diode)
Channel to ambient
Type
RSS090P03
Application
Features
Structure
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance (Ta=25°C)
Mounted on a ceramic board.
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Symbol
Taping
V
V
Tstg
2500
Tch
Rth (ch-a)
I
I
P
TB
DSS
GSS
I
DP
I
SP
Symbol
D
S
D
−55 to +150
Limits
±9.0
−1.6
−30
±20
±36
−36
150
2.0
Limits
62.5
Unit
°C
°C
W
V
V
A
A
A
A
External dimensions (Unit : mm)
SOP8
°C / W
Unit
∗1
∗1
∗2
∗
0.4Min.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
(8)
(1)
∗2
3.9
6.0
(7)
(2)
Each lead has same dimensions
(6)
(3)
∗1
RSS090P03
Rev.A
(5)
(4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
1/4
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RSS090P03FU6TB Summary of contents
Transistors Switching (−30V, −9.0A) RSS090P03 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching converter. Structure Silicon P-channel MOS FET Packaging specifications Package Taping Type Code Basic ...
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
Transistors Electrical characteristic curves 10 = −10V V DS Pulsed Ta=125°C 1 Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 GATE-SOURCE VOLTAGE : −V (V) GS Fig.1 Typical Transfer Characteristics 100 = ...
Transistors Measurement circuits D.U. Fig.10 Switching Time Test Circuit (Const.) D.U. Fig.12 Gate Charge Test Circuit ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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