BUK9628-100A,118 NXP Semiconductors, BUK9628-100A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9628-100A,118
• Description: MOSFET N-CH 100V 49A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9628-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 4293pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 49 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055884118; BUK9628-100A /T3; BUK9628-100A /T3

Philips Semiconductors
March 2000
TrenchMOS
Logic level FET
23
22
21
20
19
18
17
16
15
ID/A
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
Fig.7. Typical on-state resistance, T
RDS(ON) Ohm
60
50
40
30
20
10
3
65
60
55
50
45
40
35
30
25
0
0
5
R
DS(ON)
4
R
I
15
D
DS(ON)
2
= f(V
= f(V
5
= f(I
GS
transistor
DS
25
); conditions: I
4
); parameter V
6
D
ID/A
10.0
VGS/V
VDS/V
); paramter V
5.0
35
7
6
4.0
VGS/V =
D
45
8
GS
= 25 A;
GS
8
3.0
j
j
j
= 25 ˚C.
= 25 ˚C.
= 25 ˚C.
9
55
3.2
2.8
2.4
3.8
3.0
3.6
3.4
2.6
3.2
2.2
3.4
10
3.6
3.8
4.0
5.0
10
4
Fig.10. Normalised drain-source on-state resistance.
ID/A
gfs/S
I
a = R
D
Fig.9. Typical transconductance, T
2.5
1.5
0.5
= f(V
100
3
2
1
90
80
70
60
50
40
30
20
10
25
20
15
10
0
Fig.8. Typical transfer characteristics.
-100
5
0
DS(ON)
0
a
0.0
GS
g
) ; conditions: V
fs
/R
= f(I
-50
DS(ON)25 ˚C
20
D
); conditions: V
0
2.0
Tj/C= 175
= f(T
40
Tmb / degC
VGS/V
50
DS
ID/A
Rds(on) normalised to 25degC
j
); I
= 25 V; parameter T
D
BUK9528-100A
BUK9628-100A
60
100
= 25 A; V
DS
Product specification
4.0
= 25 V
150
j
80
= 25 ˚C.
GS
25
Rev 1.000
= 5 V
200
6.0
100
j