BUK725R0-40C,118 NXP Semiconductors, BUK725R0-40C,118 Datasheet

MOSFET N-CH TRENCH 40V SOT-428

BUK725R0-40C,118

Manufacturer Part Number
BUK725R0-40C,118
Description
MOSFET N-CH TRENCH 40V SOT-428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK725R0-40C,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Mounting Type
Surface Mount
Power - Max
157W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
60nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Gate Charge Qg
60 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
157 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934062285118
1. Product profile
Table 1.
Symbol Parameter
V
I
P
Avalanche ruggedness
E
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
DS(AL)S
DSon
GD
drain-source voltage
drain current
total power dissipation
non-repetitive drain-source
avalanche energy
gate-drain charge
drain-source on-state
resistance
Quick reference
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
[1]
AEC Q101 compliant
Avalanche robust
12V Motor, lamp and solenoid loads
High performance automotive power
systems
Current is limited by package.
BUK725R0-40C
N-channel TrenchMOS standard level FET
Rev. 01 — 23 March 2009
T
V
Conditions
T
V
see
I
T
see
V
see
D
j
mb
j(init)
GS
GS
GS
≥ 25 °C; T
= 75 A; V
Figure
Figure 15
Figure
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 25 °C; unclamped
3;
12; see
sup
j
D
D
≤ 175 °C
mb
= 25 A; V
= 25 A; T
≤ 40 V; R
= 25 °C; see
Figure 2
Figure 13
j
GS
DS
= 25 °C;
= 32 V; T
= 50 Ω; V
Figure
j
GS
1;
= 25 °C;
= 10 V;
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
High performance Pulse Width
Modulation (PWM) applications
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
27
4.1
Max
40
75
157
240
-
5
Unit
V
A
W
mJ
nC
mΩ

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BUK725R0-40C,118 Summary of contents

Page 1

... BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 — 23 March 2009 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications ...

Page 2

... DPAK lead cropped) BUK725R0-40C_1 Product data sheet N-channel TrenchMOS standard level FET Simplified outline SOT428 (SC-63; DPAK) Rev. 01 — 23 March 2009 BUK725R0-40C Graphic symbol mbb076 Version SOT428 © NXP B.V. 2009. All rights reserved ...

Page 3

... GS ≤ 10 µs; pulsed; see ° °C; see Figure °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) see Figure 4 Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET Min Max - - [ [ Figure 3 - 490 - 157 -55 175 -55 175 [ 490 = 10 V; ...

Page 4

... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = DSon 100 Rev. 01 — 23 March 2009 BUK725R0-40C 03na19 50 100 150 200 T (°C) mb 003aac305 10 μs 100 μ (V) DS © NXP B.V. 2009. All rights reserved ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK725R0-40C_1 Product data sheet (A) 10 (2) ( Conditions see Figure 5 vertical in still air; mounted on a printed circuit board; minimum foot-print - Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET 003aac068 10 t (ms) AL Min Typ Max - 0.65 0. 003aac067 δ (s) p © ...

Page 6

... °C G(ext) j measured from drain to centre of die °C j measured from source lead to source bond pad ° ° see Figure /dt = -100 A/µ - ° Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET Min Typ Max 4 500 - 0. 100 - 2 100 - - 9 ...

Page 7

... GS Fig 7. Output characteristics: drain current as a function of drain-source voltage; typical values 003aac248 30 R DSon (mΩ (A) D Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET 003aac245 ( 6.5 6 5 003aac249 ...

Page 8

... T (°C) j Fig 11. Sub-threshold drain current as a function of gate-source voltage 03aa27 DSon (mΩ 120 180 ( ° Fig 13. Drain-source on-state resistance as a function of drain current; typical values Rev. 01 — 23 March 2009 BUK725R0-40C 03aa35 min typ max (V) GS 003aac250 5 ( 100 200 300 400 ...

Page 9

... SD Fig 15. Gate-source voltage as a function of gate charge; typical values 5000 C (pF) C iss 4000 C oss 3000 2000 C rss 1000 Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET 003aac247 (nC) G 003aac246 2 10 (V) DS © NXP B.V. 2009. All rights reserved ...

Page 10

... min min 0.56 6.22 6.73 4.0 4.45 2.285 0.20 5.98 6.47 REFERENCES JEDEC JEITA TO-252 SC-63 Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET min 10.4 2.95 0.9 0.5 4.57 9.6 2.55 0.5 EUROPEAN ISSUE DATE PROJECTION 06-02-14 06-03-16 © ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK725R0-40C_1 20090323 BUK725R0-40C_1 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Rev. 01 — 23 March 2009 BUK725R0-40C Supersedes - © NXP B.V. 2009. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 23 March 2009 BUK725R0-40C N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK725R0-40C_1 All rights reserved. Date of release: 23 March 2009 ...

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