BUK7511-55A,127 NXP Semiconductors, BUK7511-55A,127 Datasheet - Page 10

• Manufacturer Part Number: BUK7511-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7511-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3093pF @ 25V
• Power - Max: 166W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 166 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055877127; BUK7511-55A; BUK7511-55A

NXP Semiconductors
8. Revision history
Table 7.
BUK7511-55A
Product data sheet
Document ID
BUK7511-55A v.2
Modifications:
BUK7511_7611_55A v.1
(9397 750 07817)
Revision history
Release date
20100617
20010201
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7511-55A separated from data sheet BUK7511_7611_55A v.1.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product Specification
Rev. 02 — 17 June 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK7511-55A
-
Supersedes
BUK7511_7611_55A v.1
© NXP B.V. 2010. All rights reserved.
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