BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK9608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055645118; BUK9608-55A /T3; BUK9608-55A /T3

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
9397 750 09573
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
D
DM
DR
DRM
DS
tot
j
DS
DGR
GS
tot
stg
j
DS(AL)S
DSon
Current is limited by power dissipation chip rating
Continuous current is limited by package.
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive drain-source avalanche
energy
Quick reference data
Limiting values
Conditions
T
T
T
T
T
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
Rev. 03 — 6 May 2002
mb
mb
j
j
j
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
55 V; V
and
mb
= 25 C
GS
GS
GS
3
Figure 1
GS
GS
GS
= 5 V; I
= 4.5 V; I
= 10 V; I
GS
= 5 V; R
= 5 V
= 5 V;
= 5 V;
p
p
D
D
= 25 A
D
GS
10 s;
10 s
Figure 2
= 25 A
= 25 A
D
= 50 ;
= 75 A;
BUK95/9608-55A
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
[1]
[2]
[2]
[1]
[2]
Typ
-
-
-
-
6.8
-
6.4
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
55
125
253
175
8
8.5
7.5
Max
55
55
125
75
75
503
253
+175
+175
125
75
503
670
15
Unit
V
A
W
m
m
m
Unit
V
V
V
A
A
A
A
W
A
A
A
mJ
C
C
C
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