BUK7210-55B/C1,118 NXP Semiconductors, BUK7210-55B/C1,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7210-55B/C1,118
• Description: MOSFET N-CH 55V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7210-55B/C1,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Mounting Type: Surface Mount
• Gate Charge Qg: 35 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 185 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934062108118

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LFPAK
LFPAK (SOT669) for high-density applications
NXP MOSFETs housed in the compact, thermally-enhanced
Loss Free PAcKage (LFPAK) are optimized for high-density
automotive applications. LFPAK delivers the ultimate
combination with ultra-low package resistance, superior
reliability and thermal performance. All this in a very small
package that ensures you can put power where you need it
most, anywhere in the car.
In automotive systems space is becoming a key issue,
especially under the hood. Today’s MOSFETs need to provide
the absolute best thermal performance possible to enable
switching of loads requiring significant currents. In answer to
this, NXP has introduced the LFPAK to ensure a superior level
of on-resistance and thermal performance in an extremely
compact housing. The combination of NXP’s TrenchMOS
technology and LFPAK delivers compact power to many
applications that previously were limited to only large discrete
power packages.
The LFPAK’s copper source clip design overcomes the
limitations of the standard SO8, resulting in thermal resistances
comparable to that of bigger packages such as DPAK. In
a traditional power package the main thermal pathway is
vertically down through the mounting and into the PCB.
However, the LFPAK also conducts a significant amount of heat
upwards and out through the source lead.
Fully qualified to meet the rigorous demands of the AEC-Q101
standard for discrete devices, these new products are aimed
at a variety of applications where size, thermal performance
and low cost manufacturing processes are critical design
considerations.
Real-estate benefits of using LFPAK
Power MOSFETs for Automotive Applications
by more than 45%
PCB area reduced
Key benefits :
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Target applications for LFPAK products
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Comparison between typical wirebonds and clip design
*
LFPAK thermal conduction
1 x 300 µm bond wire
Low inductance
Low thermal resistance
Dimensions comparable to SO8
Significantly thinner than SO8 & DPAK
Wirebond free - Cu clip design
High current transient robustness
Avalanche Robust up to T
100% avalanche tested
Automotive AEC-Q101 qualified to 175 °C
Leads are optical-inspection friendly
Engine and transmission controllers
Advanced braking systems
Coolant pumps
DC-DC converters
Reverse battery protection
General-purpose automotive switching where space is at a premium
LFPAK case temperature is significantly lower than two SO8 packages, and
Package
similar to single DPAK ( 1 W power dissipation on all three packages )
LFPAK
DPAK
*
PCB
2 Part Leadframe
j
(max)
Lead/Wire Res (mΩ)
0.31
2.21
Chip
Plastic
PCB
bra187