IRFZ44N,127 NXP Semiconductors, IRFZ44N,127 Datasheet - Page 2

• Manufacturer Part Number: IRFZ44N,127
• Description: MOSFET N-CH 55V 49A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRFZ44N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055538127; IRFZ44NP; IRFZ44NP

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
February 1999
N-channel enhancement mode
TrenchMOS
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
g
C
C
C
Q
Q
Q
t
t
t
t
L
L
L
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
V
fs
d
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
= 25˚C unless otherwise specified
(BR)GSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate source breakdown voltage I
Drain-source on-state
resistance
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Total gate charge
Gate-cource charge
Gate-drain (miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
TM
transistor
CONDITIONS
V
V
V
V
V
CONDITIONS
V
V
V
V
V
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
CONDITIONS
I
I
I
V
G
F
F
F
GS
DS
DS
GS
GS
DS
GS
DD
DD
GS
GS
= 25 A; V
= 40 A; V
= 40 A; -dI
= 1 mA;
= 0 V; I
= V
= 55 V; V
= 10 V; V
= 10 V; I
= 25 V; I
= 0 V; V
= 44 V; I
= 30 V; I
= 10 V; R
= -10 V; V
GS
; I
2
D
D
GS
GS
DS
D
D
D
D
F
= 0.25 mA;
= 1 mA
GS
/dt = 100 A/ s;
G
= 25 A
= 25 A
= 50 A; V
= 25 A;
= 0 V
= 0 V
R
DS
= 25 V; f = 1 MHz
= 10
= 30 V
= 0 V;
= 0 V
GS
T
T
T
T
T
T
j
j
j
j
j
j
= 10 V
= 175˚C
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
2.0
1.0
55
50
16
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
1350
TYP.
0.05
0.04
0.95
0.15
330
155
3.0
3.5
4.5
7.5
1.0
15
18
50
40
30
47
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Product specification
MAX.
MAX.
MAX.
1800
500
400
215
160
4.0
4.4
1.2
10
20
22
42
62
15
26
26
75
50
40
49
IRFZ44N
1
-
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
m
m
nC
nC
nC
nH
nH
nH
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
S
A
A
V
C
A
A
A
A