BUK7613-75B,118 NXP Semiconductors, BUK7613-75B,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7613-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7613-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057739118::BUK7613-75B /T3::BUK7613-75B /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7613-75B
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
−1
−2
−3
1
1
3
2
10
1
−6
δ = 0.5
Limit R
single shot
0.05
0.02
0.2
0.1
DSon
10
= V
−5
DS
All information provided in this document is subject to legal disclaimers.
/ I
D
DC
10
Rev. 2 — 17 November 2010
10
Conditions
see
board ; minimum footprint
−4
mounted on a printed-circuit
Figure 4
10
−3
t
100 μ s
1 ms
10 ms
100 ms
10
p
10
= 10 μ s
−2
N-channel TrenchMOS standard level FET
2
P
V
DS
10
t
−1
p
(V)
T
t
p
BUK7613-75B
Min
-
-
(s)
δ =
03nm81
03nm82
t
T
t
p
10
1
3
Typ
-
50
© NXP B.V. 2010. All rights reserved.
Max
0.95
-
Unit
K/W
K/W
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