PSMN9R5-100PS,127 NXP Semiconductors, PSMN9R5-100PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN9R5-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 211W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 89A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.6 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 211 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064327127

NXP Semiconductors
Table 6.
PSMN9R5-100PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(S)
g
DSon
150
100
fs
50
30
24
18
12
0
6
of gate-source voltage; typical values.
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
4
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
8
…continued
12
40
16
60
All information provided in this document is subject to legal disclaimers.
V
003aae021
I
003aae025
D
GS
(A)
(V)
Conditions
I
see
I
V
Rev. 03 — 28 October 2010
S
S
20
80
GS
= 15 A; V
= 20 A; dI
Figure 17
= 0 V; V
N-channel 100 V 9.6 mΩ standard level MOSFET in T0220
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 50 V
(pF)
(A)
I
8000
C
6000
4000
2000
D
100
75
50
25
0
0
j
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
= 25 °C;
0
0
0.5
3
PSMN9R5-100PS
10
5.5
Min
-
-
-
6
1
Typ
0.85
61.5
157
1.5
9
V
© NXP B.V. 2010. All rights reserved.
GS
V
003aae019
V
003aae022
GS
DS
(V) = 4
Max
1.2
-
-
(V)
C
C
5
(V)
4.8
4.7
4.5
4.3
rss
iss
12
2
Unit
V
ns
nC
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