BUK9608-55B,118 NXP Semiconductors, BUK9608-55B,118 Datasheet - Page 11
BUK9608-55B,118
Manufacturer Part Number
BUK9608-55B,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9608-55B118.pdf
(14 pages)
Specifications of BUK9608-55B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
203W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
45nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
15 V
Continuous Drain Current
110 A
Power Dissipation
203000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057716118::BUK9608-55B /T3::BUK9608-55B /T3
NXP Semiconductors
8. Revision history
Table 7.
BUK9608-55B
Product data sheet
Document ID
BUK9608-55B_4
Modifications:
BUK9608-55B_3
Revision history
Release date
20100504
20100429
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 4 May 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
Supersedes
BUK9608-55B_3
BUK95_96_9E08_55B-02
BUK9608-55B
© NXP B.V. 2010. All rights reserved.
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