PSMN015-100B,118 NXP Semiconductors, PSMN015-100B,118 Datasheet - Page 11
![MOSFET N-CH 100V 75A SOT404](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
PSMN015-100B,118
Manufacturer Part Number
PSMN015-100B,118
Description
MOSFET N-CH 100V 75A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN015-100B118.pdf
(13 pages)
Specifications of PSMN015-100B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
15 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055639118::PSMN015-100B /T3::PSMN015-100B /T3
Philips Semiconductors
8. Revision history
Table 6:
9397 750 12543
Product data
Rev Date
05
20040114
Revision history
CPCN
HZG463a
Description
Product data (9397 750 12543); supersedes Product specification
PSMN015-100P, PSMN015-100B Rev 1.200 of June 2003
Modifications:
•
•
•
•
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new presentation
and information standards of Philips Semiconductors.
Section 1.4 “Quick reference data”
Section 4 “Limiting values”
Section 4 “Limiting values”
Section 4 “Limiting values” Figure 3
Section 5 “Thermal characteristics” Figure 4
Section 6 “Characteristics”
Section 6 “Characteristics”
values modified.
Section 6 “Characteristics” Figure
Rev. 05 — 14 January 2004
W
modification to E
V
Q
GS(TO)
g(tot),
DSS
changed to E
Q
5, 6, 7, 8, 11,
and
correction to an error in T
gd
graph modified.
N-channel TrenchMOS™ Standard level FET
, C
Section 4 “Limiting values”
PSMN015-100P/100B
iss
, C
DS(AL)S
graph modified.
oss
DS(AL)S
12
, C
.
rss,
and
.
t
don
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
13
, t
modified.
r
, t
j
= 55 C max limit.
doff
, t
V
f
, t
DSS
rr
and Q
changed to V
r
typical
11 of 13
DS
.