BUK7504-40A,127 NXP Semiconductors, BUK7504-40A,127 Datasheet - Page 7

• Manufacturer Part Number: BUK7504-40A,127
• Description: MOSFET N-CH 40V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7504-40A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 5730pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0045 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056693127; BUK7504-40A; BUK7504-40A

NXP Semiconductors
BUK7504-40A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
450
400
350
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
12
20
10
2
9
8.5
2
4
min
typ
6
7.5
4
V
GS
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
(V) = 5.5
V
DS
(V)
03ne65
03aa35
(V)
10
6
Rev. 03 — 15 June 2010
6.5
4.5
4.5
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
100
80
60
40
20
6
5
4
3
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK7504-40A
40
15
60
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
(V)
(A)
03ne64
03ne62
20
80
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