BUK9604-40A,118 NXP Semiconductors, BUK9604-40A,118 Datasheet
BUK9604-40A,118
Specifications of BUK9604-40A,118
BUK9604-40A /T3
BUK9604-40A /T3
Related parts for BUK9604-40A,118
BUK9604-40A,118 Summary of contents
Page 1
... Rev. 01 — 24 October 2001 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Logic level compatible ...
Page 2
Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...
Page 3
Philips Semiconductors 120 P der (%) 100 100 125 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of ...
Page 4
Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to mounting th(j-mb) base 7.1 Transient thermal impedance 1 Z th(j-mb) (K/ ...
Page 5
Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...
Page 6
Philips Semiconductors Table 5: Characteristics …continued unless otherwise specified j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge 400 I ...
Page 7
Philips Semiconductors 2.5 V GS(th) (V) max 2 typ 1.5 min 1 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. 100 g ...
Page 8
Philips Semiconductors 100 175 º Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
Page 9
Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...
Page 10
Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...
Page 11
Philips Semiconductors Plastic single-ended package; low-profile 3 lead TO-220AB DIMENSIONS (mm are the original dimensions) UNIT 4.5 1.40 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note 1. Terminals ...
Page 12
Philips Semiconductors 10. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 19. Reflow soldering footprint for SOT404. 9397 750 08649 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...
Page 13
Philips Semiconductors 11. Revision history Table 6: Revision history Rev Date CPCN Description 01 20011024 - Product Specification; initial version 9397 750 08649 Product data BUK95/96/9E04-40A Rev. 01 — 24 October 2001 TrenchMOS™ logic level FET © Koninklijke Philips Electronics ...
Page 14
Philips Semiconductors 12. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product ...
Page 15
Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...