BUK9E06-55B,127 NXP Semiconductors

MOSFET N-CH 55V 75A I2PAK

BUK9E06-55B,127

Manufacturer Part Number
BUK9E06-55B,127
Description
MOSFET N-CH 55V 75A I2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r

Specifications of BUK9E06-55B,127

Package / Case
I²Pak, TO-220AB (3 straight leads + tab)
Mounting Type
Through Hole
Power - Max
258W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
60nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
55V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.4 mOhm @ 25A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0054 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
15 V
Continuous Drain Current
146 A
Power Dissipation
258 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057313127::BUK9E06-55B::BUK9E06-55B

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