BUK7606-55B,118 NXP Semiconductors, BUK7606-55B,118 Datasheet
BUK7606-55B,118
Specifications of BUK7606-55B,118
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BUK7606-55B,118 Summary of contents
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... BUK7606-55B N-channel TrenchMOS standard level FET Rev. 02 — 21 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B N-channel TrenchMOS standard level FET Min ≤ 175 ° [ ° Figure 3 Figure ...
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... Figure 3 ≤ 10 µs; pulsed ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B Min Typ Max - - - [ 145 [ [ 582 - - 254 -55 - ...
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... T (°C) mb Fig 2. Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B N-channel TrenchMOS standard level FET 0 50 100 150 T Normalized total power dissipation as a function of mounting base temperature (V) DS © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7606-55B Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B Min Typ Max - - 0. 03nl97 t P δ ...
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... °C j from source lead to source bond pad ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B Min Typ Max Unit 4 0.02 1 µ 500 µ ...
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... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B N-channel TrenchMOS standard level FET 12 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...
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... Fig 10. Gate-source threshold voltage as a function of 03nl94 Label 210 280 350 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nl88 = 25 ° ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7606-55B separated from data sheet BUK75_7606_55B v.1. BUK75_7606_55B v.1 20030331 BUK7606-55B Product data sheet ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7606-55B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 June 2010 Document identifier: BUK7606-55B ...