BUK7520-100A,127 NXP Semiconductors, BUK7520-100A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK7520-100A,127
• Description: MOSFET N-CH 100V 63A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7520-100A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 4373pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 63 A
• Power Dissipation: 200000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055651127; BUK7520-100A; BUK7520-100A

Philips Semiconductors
9397 750 07885
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
100
(A)
80
60
40
20
0
0
2
T j = 175 o C
4
T j = 25 o C
6
I S
V GS (V)
(A)
120
100
80
60
40
20
0
03nd51
0.0
8
Rev. 01 — 5 February 2001
BUK7520-100A; BUK7620-100A
0.5
T j = 175 o C
Fig 14. Gate-source voltage as a function of turn-on
T
1.0
j
= 25 C; I
gate charge; typical values.
V DS (V)
T j = 25 o C
V GS
(V)
10
8
6
4
2
0
03nd48
0
D
1.5
= 25 A
20
TrenchMOS™ standard level FET
V DD = 14V
40
© Philips Electronics N.V. 2001. All rights reserved.
60
V DD = 80V
80
Q G (nC)
03nd49
100
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