BUK762R7-30B,118 NXP Semiconductors, BUK762R7-30B,118 Datasheet - Page 2

MOSFET N-CH 30V 75A D2PAK

BUK762R7-30B,118

Manufacturer Part Number
BUK762R7-30B,118
Description
MOSFET N-CH 30V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK762R7-30B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
91nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
30V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0027 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
241 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057087118::BUK762R7-30B /T3::BUK762R7-30B /T3
NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK762R7-30B
Product data sheet
Pin
1
2
3
mb
Type number
BUK762R7-30B
It is not possible to make connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Package
Name
D2PAK
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 8 June 2010
Simplified outline
SOT404 (D2PAK)
1
mb
2
3
N-channel TrenchMOS standard level FET
Graphic symbol
BUK762R7-30B
mbb076
G
© NXP B.V. 2010. All rights reserved.
D
S
Version
SOT404
2 of 14

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