BUK9610-100B,118 NXP Semiconductors, BUK9610-100B,118 Datasheet
BUK9610-100B,118
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BUK9610-100B,118 Summary of contents
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... BUK9610-100B N-channel TrenchMOS logic level FET Rev. 03 — 31 January 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET Min ≤ 100 V; - sup = °C; j Graphic symbol ...
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... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET Min - - -15 [1] Figure 1; - [2] - [2] Figure 1 - ≤ 10 µ ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9610-100B Product data sheet = V /I DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET 02ng68 = 10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9610-100B Product data sheet Conditions see Figure 4 mounted on a printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET Min Typ - - - 50 03ng69 t p δ ...
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... °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET Min Typ Max = 25 °C 100 - - j = -55 °C ...
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... 2 (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET Min = 25 ° ° DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 200 g fs ...
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... Fig 10. Gate-source threshold voltage as a function of 03ng66 200 250 300 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET 2.5 2.0 max 1.5 typ min 1.0 0.5 0 −60 0 ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET C iss 8000 C 6000 oss 4000 C rss 2000 0 − function of drain-source voltage; typical values 03ng60 = 25 ° ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9610-100B separated from data sheet BUK95_9610_100B v.2. BUK95_9610_100B v.2 20021008 BUK9610-100B Product data sheet ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 January 2011 BUK9610-100B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 January 2011 Document identifier: BUK9610-100B ...