BUK714R1-40BT,118 NXP Semiconductors, BUK714R1-40BT,118 Datasheet - Page 5

• Manufacturer Part Number: BUK714R1-40BT,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK714R1-40BT,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 6808pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0041 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 187 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058847118; BUK714R1-40BT /T3; BUK714R1-40BT /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK714R1-40BT_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-mb)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Z th(j-mb)
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
(K/W)
10 -1
10 -2
10 -3
1
10 -6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10 -5
Conditions
minimum footprint; mounted on a
printed-circuit board
see
Figure 4
10 -4
Rev. 02 — 10 February 2009
10 -3
10 -2
N-channel TrenchPLUS standard level FET
BUK714R1-40BT
10 -1
Min
-
-
P
Typ
-
-
1
t p
T
© NXP B.V. 2009. All rights reserved.
t p (s)
δ
=
03ni64
Max
50
0.55
t p
T
t
10
Unit
K/W
K/W
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