APT23F60B Microsemi Power Products Group, APT23F60B Datasheet - Page 3

• Manufacturer Part Number: APT23F60B
• Description: MOSFET N-CH 600V 23A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 8™r

Specifications of APT23F60B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 310 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4415pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.0
2.5
2.0
1.5
1.0
0.5
80
70
60
50
40
30
20
10
35
30
25
20
15
10
16
14
12
10
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0
5
0
8
6
4
2
0
-55 -25
0
0
0
Figure 3, R
V
V
V
I
NORMALIZED TO
D
GS
DS(ON)
GS
= 11A
T
T
20
= 10V
= 10V @ 11A
J
Figure 1, Output Characteristics
J
Figure 5, Gain vs Drain Current
= 125°C
, JUNCTION TEMPERATURE (°C)
Q
5
T
5
g
, DRAIN-TO-SOURCE VOLTAGE (V)
J
, TOTAL GATE CHARGE (nC)
= 25°C
I
40
0
D
T
DS(ON)
, DRAIN CURRENT (A)
J
10
= -55°C
V
DS
25
60
10
=
T
V
J
vs Junction Temperature
DS
300V
= 125°C
15
50
=
80
V
120V
T
DS
J
15
= -55°C
=
100 120 140 160
T
75
J
480V
20
= 150°C
T
100 125 150
J
= 25°C
20
25
30
25
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
6,000
1000
100
35
30
25
20
15
10
80
70
60
50
40
30
20
10
10
80
70
60
50
40
30
20
10
Figure 6, Capacitance vs Drain-to-Source Voltage
5
0
0
0
0
0
0
0
T
V
J
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
DS
V
V
V
= 125°C
V
DS
> I
DS
SD
1
Figure 4, Transfer Characteristics
GS
Figure 2, Output Characteristics
100
D(ON)
T
5
, DRAIN-TO-SOURCE VOLTAGE (V)
, DRAIN-TO-SOURCE VOLTAGE (V)
, SOURCE-TO-DRAIN VOLTAGE (V)
J
0.3
, GATE-TO-SOURCE VOLTAGE (V)
= 150°C
x R
2
DS(ON)
200
10
V
T
T
3
MAX.
0.6
GS
J
J
= 25°C
= 125°C
= 7 &,10V
300
T
15
4
J
= 25°C
T
J
0.9
= -55°C
5
400
20
6
1.2
500
25
C
7
C
C
6.5V
iss
5.5V
oss
rss
6V
5V
600
1.5
30
8