APT23F60B Microsemi Power Products Group, APT23F60B Datasheet - Page 4

• Manufacturer Part Number: APT23F60B
• Description: MOSFET N-CH 600V 23A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 8™r

Specifications of APT23F60B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 310 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4415pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
100
0.1
10
1
0
10
1
Dimensions in Millimeters and (Inches)
T
-5
T
Figure 9, Forward Safe Operating Area
J
V
C
I
DM
=
DS
=
R ds(on)
125°C
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
75°C
, DRAIN-TO-SOURCE VOLTAGE (V)
TO-247 (B) Package Outline
D = 0.9
6.15 (.242) BSC
0.7
0.3
0.1
4.50 (.177) Max.
0.5
0.05
1.01 (.040)
1.40 (.055)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10
5.45 (.215) BSC
13µs
2-Plcs.
100µs
100ms
1ms
10ms
10
DC line
15.49 (.610)
16.26 (.640)
-4
100
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
RECTANGULAR PULSE DURATION (seconds)
800
10
SINGLE PULSE
-3
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
10
100
0.1
10
Figure 10, Maximum Forward Safe Operating Area
-2
1
1
{3 Plcs}
Scaling for Different Case & Junction
Temperatures:
T
R ds(on)
T
V
J
1.22 (.048)
1.32 (.052)
C
I
D
DS
=
I
=
DM
=
D
150°C
, DRAIN-TO-SOURCE VOLTAGE (V)
25°C
I
Dimensions in Millimeters (Inches)
D(T
3
PAK Package Outline
C
= 25
Note:
10
Peak T J = P DM x Z θJC + T C
15.95 (.628)
16.05(.632)
°
Revised
4/18/95
C)
13µs
100µs
Duty Factor D =
*(
t
1
10
T
1ms
J
= Pulse Duration
-1
10ms
-
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
100ms
t 1
DC line
T
Gate
C
)/125
13.79 (.543)
13.99(.551)
Drain
t 2
100
Source
1.04 (.041)
1.15(.045)
1.27 (.050)
1.40 (.055)
t 1
/
t 2
APT23F60B_S
13.41 (.528)
13.51(.532)
1.0
800
Revised
8/29/97
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
11.51 (.453)
11.61 (.457)