APT18F60B Microsemi Power Products Group, APT18F60B Datasheet

APT18F60B

Manufacturer Part Number

APT18F60B

Description

MOSFET N-CH 600V 18A TO-247

Manufacturer

Microsemi Power Products Group

Datasheet

1.APT18F60B.pdf (4 pages)

Specifications of APT18F60B

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

390 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

5V @ 1mA

Gate Charge (qg) @ Vgs

90nC @ 10V

Input Capacitance (ciss) @ Vds

3550pF @ 25V

Power - Max

335W

Mounting Type

Through Hole

Package / Case

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT18F60BMI
APT18F60BMI

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT18F60B

Manufacturer:

Microsemi Power Products Group

Quantity:

135

Current page: 1 of 4
Download datasheet (115Kb)

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Symbol

Torque

Power MOS 8

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

FEATURES

• Fast switching with low EMI

• Low t rr for high reliability

• Ultra low C rss for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

θ CS

θ JC

STG

Parameter

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-247 Package), 6-32 or M3 screw

™

is a high speed, high voltage N-channel switch-mode power MOSFET.

rss

iss

N-Channel FREDFET

result in excellent noise immunity and low switching loss. The

Microsemi Website - http://www.microsemi.com

= 25°C

= 100°C

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• PFC and other boost converter

• Buck converter

• Single and two switch forward

• Flyback

, soft

600V, 19A, 0.37Ω Max, t rr ≤200ns

Min

-55

Single die FREDFET

APT18F60B

Ratings

Typ

0.15

0.22

±30

6.2

495

APT18F60B

APT18F60S

Max

0.37

335

150

300

1.1

PAK

°C/W

in·lbf

Unit

N·m

°C

Related parts for APT18F60B

APT18F60B Summary of contents

Page 1

... Single and two switch forward • Flyback = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT18F60B APT18F60S 600V, 19A, 0.37Ω Max ≤200ns 3 D PAK , soft rr APT18F60B APT18F60S Single die FREDFET G Ratings ±30 495 9 Min Typ Max 335 0.37 0.15 -55 ...

Page 2

... 25° 100A/µ 100V DD ≤ 9A, di/dt ≤1000A/µ 125° 25Ω 9A. AS with V OSS with V OSS = -3.43E-8 1.44E-8/V o(er APT18F60B_S Min Typ I = 250µA 600 D = 250µA 0. . 1mA D - 25° 125°C J Min Typ , 3550 , V ...

Page 3

... GATE-TO-SOURCE VOLTAGE (V) GS Figure 4, Transfer Characteristics 5,000 1000 100 100 V , DRAIN-TO-SOURCE VOLTAGE (V) DS Figure 6, Capacitance vs Drain-to-Source Voltage 140 0 0 SOURCE-TO-DRAIN VOLTAGE (V) SD Figure 8, Reverse Drain Current vs Source-to-Drain Voltage APT18F60B_S = 7 &, 5. MAX. DS(ON -55° 25° 125° iss C oss C rss ...

Page 4

... Gate Drain Source APT18F60B_S ds(on) 13µs 100µs 1ms 10ms = T 150° 100ms = T 25°C ...

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