APT10M19BVFRG Microsemi Power Products Group, APT10M19BVFRG Datasheet

APT10M19BVFRG

Manufacturer Part Number

APT10M19BVFRG

Description

MOSFET N-CH 100V 75A TO-247

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT10M19BVFRG.pdf (4 pages)

Specifications of APT10M19BVFRG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

19 mOhm @ 37.5A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

300nC @ 10V

Input Capacitance (ciss) @ Vds

6120pF @ 25V

Power - Max

370W

Mounting Type

Through Hole

Package / Case

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT10M19BVFRG

Manufacturer:

Quantity:

2 000

Current page: 1 of 4
Download datasheet (121Kb)

Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

•

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Symbol

TO-247 or Surface Mount D

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

PAK Package

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25°C

• Avalanche Energy Rated

•

= 25°C

FAST RECOVERY BODY DIODE

, I

= ±30V, V

= 80V, V

= 100V, V

= 1mA)

= 0V, I

FREDFET

= 10V, I

= 250µA)

= 0V)

= 0V, T

= 0V)

= 37.5A)

All Ratings: T

= 125°C)

APT10M19SVFR

100V 75A

= 25°C unless otherwise specified.

APT10M19BVFR_SVFR

MIN

100

BVFR

TO-247

-55 to 150

1500

2.96

TYP

±30

±40

100

300

370

300

0.019

1000

±100

MAX

250

0.019

PAK

SVFR

Ohms

Amps

Watts

UNIT

W/°C

UNIT

Volts

µA

°C

Ω Ω Ω Ω Ω

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APT10M19BVFRG Summary of contents

Page 1

POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

V GS =9V, 10V & 15V 160 120 6.5V 80 5. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 125 -55° +25°C ...

Page 4

OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 0.5 ...

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