APT10M19BVFRG Microsemi Power Products Group, APT10M19BVFRG Datasheet - Page 2

• Manufacturer Part Number: APT10M19BVFRG
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M19BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 37.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 6120pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
C
t
C
C
I
R
R
Q
Q
d(off)
V
dv
d(on)
Q
RRM
Q
I
SM
t
I
oss
t
t
rss
θJC
iss
SD
θJA
gd
S
rr
gs
r
f
/
g
rr
dt
0.005
0.001
0.05
0.01
0.4
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -75A,
= -75A,
= -75A,
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.05
0.01
0.2
0.1
di
di
di
/
/
/
dt
dt
dt
SINGLE PULSE
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
-4
3
dv
1
2
/
dt
(Body Diode)
(V
5
GS
= 0V, I
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
S
= -75A)
10
4 Starting T
5
-2
I
I
Test Conditions
D
D
dv
device itself.
= 75A @ 25°C
= 75A @ 25°C
/
V
V
R
V
V
V
dt
f = 1 MHz
V
GS
GS
DS
DD
DD
G
GS
numbers reflect the limitations of the test circuit rather than the
T
T
T
T
T
T
= 1.6Ω
j
j
j
j
j
j
= 25V
= 10V
= 50V
= 15V
= 50V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
j
= +25°C, L = 0.53mH, R
I
S
10
≤
-1
-
I
D
75A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
MIN
MIN
MIN
Duty Factor D =
≤ 700A/µs
1.0
t 1
G
= 25Ω, Peak I
t 2
APT10M19BVFR_SVFR
5100
1900
TYP
TYP
800
200
TYP
0.5
1.0
40
92
16
40
50
20
12
8
t 1
V
/ t
R
2
≤100V
6120
2660
1200
MAX
MAX
MAX
300
140
300
200
350
0.34
1.3
L
60
32
80
75
40
75
40
5
10
= 75A
T
J
≤ 150
Amps
Amps
UNIT
UNIT
Volts
V/ns
UNIT
°C/W
nC
pF
µC
ns
ns
°
C