APT34F100B2 Microsemi Power Products Group, APT34F100B2 Datasheet

APT34F100B2

Manufacturer Part Number

APT34F100B2

Description

MOSFET N-CH 1000V 34A T-MAX

Manufacturer

Microsemi Power Products Group

Series

POWER MOS 8™r

Datasheet

1.APT34F100L.pdf (4 pages)

Specifications of APT34F100B2

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

400 mOhm @ 18A, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

34A

Vgs(th) (max) @ Id

5V @ 2.5mA

Gate Charge (qg) @ Vgs

305nC @ 10V

Input Capacitance (ciss) @ Vds

9835pF @ 25V

Power - Max

1135W

Mounting Type

Through Hole

Package / Case

T-MAX

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT34F100B2-H

Manufacturer:

MSC

Quantity:

1 200

Current page: 1 of 4
Download datasheet (246Kb)

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Symbol

Torque

Power MOS 8

This 'FREDFET' version has a drain-source (body) diode that has been optimized for

high reliability in ZVS phase shifted bridge and other circuits through reduced t

recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly

reduced ratio of C

intrinsic gate resistance and capacitance of the poly-silicon gate structure help control

di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

at very high frequency.

FEATURES

• Fast switching with low EMI

• Low t rr for high reliability

• Ultra low C rss for improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

θ CS

θ JC

STG

Parameter

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-264 Package), 4-40 or M3 screw

™

is a high speed, high voltage N-channel switch-mode power MOSFET.

rss

iss

N-Channel FREDFET

result in excellent noise immunity and low switching loss. The

= 25°C

Microsemi Website - http://www.microsemi.com

= 25°C

= 100°C

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• PFC and other boost converter

• Buck converter

• Single and two switch forward

• Flyback

, soft

1000V, 34A, 0.40Ω Max, t rr ≤300ns

Min

-55

Single die FREDFET

APT34F100B2

Ratings

Typ

0.11

0.22

2165

T-Max

APT34F100L

±30

6.2

140

APT34F100L

1135

Max

0.11

150

300

1.1

TO-264

°C/W

in·lbf

Unit

N·m

°C

Related parts for APT34F100B2

APT34F100B2 Summary of contents

Page 1

... Single and two switch forward • Flyback = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT34F100B2 APT34F100L 1000V, 34A, 0.40Ω Max ≤300ns T-Max ® TO-264 , soft rr APT34F100B2 APT34F100L Single die FREDFET G Ratings 34 21 140 ±30 2165 18 Min Typ Max 1135 0.11 0.11 -55 ...

Page 2

Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefﬁcient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefﬁcient GS(th Zero Gate Voltage Drain Current DSS ...

Page 3

V = 10V -55° 25° 125°C J NORMALIZED 10V @ 18A & 4.5V V > MAX. ...

Page 4

I DM 13µs 100µs 1ms 10ms R ds(on) 100ms DC line Dissipated Power (Watts 0.9 0.7 0.5 0.3 0.1 0.05 ® T-MAX (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 20.80 (.819) 21.46 (.845) 0.40 ...

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