APT34F100B2 Microsemi Power Products Group, APT34F100B2 Datasheet - Page 4

• Manufacturer Part Number: APT34F100B2
• Description: MOSFET N-CH 1000V 34A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 8™r

Specifications of APT34F100B2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 305nC @ 10V
• Input Capacitance (ciss) @ Vds: 9835pF @ 25V
• Power - Max: 1135W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
DM
R ds(on)
D = 0.9
T-MAX
Dissipated Power
These dimensions are equal to the TO-247 without the mounting hole.
0.7
0.3
0.1
0.5
0.05
(Watts)
13µs
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
®
100µs
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Dimensions in Millimeters and (Inches)
(B2) Package Outline
1ms
10ms
100ms
DC line
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
T
J
2-Plcs.
(°C)
0.0147
15.49 (.610)
16.26 (.640)
0.0167
SINGLE PULSE
e3 100% Sn Plated
0.0330
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
2.87 (.113)
3.12 (.123)
0.0401
Gate
Drain
Source
0.479
TO-264 (L) Package Outline
0.0525
T
Dimensions in Millimeters and (Inches)
C
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
(°C)
Scaling for Different Case & Junction
Temperatures:
I
D
I
DM
=
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
I
D(T
C
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
= 25
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
R ds(on)
Note:
EXT
Peak T J = P DM x Z θJC + T C
2.79 (.110)
3.18 (.125)
2-Plcs.
°
C)
are the external thermal
Duty Factor D =
*(
t
1
T
= Pulse Duration
13µs
J
19.51 (.768)
20.50 (.807)
100µs
-
t 1
T
C
)/125
10ms
t 2
t 1
100ms
/
t 2
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source