APL602LG Microsemi Power Products Group, APL602LG Datasheet - Page 2

• Manufacturer Part Number: APL602LG
• Description: MOSFET N-CH 600V 49A TO-264
• Manufacturer: Microsemi Power Products Group

Specifications of APL602LG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 730W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

DYNAMIC CHARACTERISTICS
1
2
THERMAL CHARACTERISTICS
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
C
d
C
d
C
R
R
(on)
(off)
oss
t
t
iss
rss
r
f
JC
JA
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.7
0.5
0.3
0.1
0.05
10
-4
Case temperature
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
Junction
temp. ( ”C)
RECTANGULAR PULSE DURATION (SECONDS)
(Watts)
SINGLE PULSE
Power
10
-3
RC MODEL
3
4
Test Conditions
I
D
0.0575
0.113
See MIL-STD-750 Method 3471
Starting T
= 49A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DS
GS
G
GS
= 0.6
= 300V
= 25V
= 15V
= 0V
10
-2
j
= +25°C, L = 2.50mH, R
0.0187F
0.358F
Note:
Peak T J = P DM x Z JC + T C
MIN
Duty Factor D = t 1 / t
MIN
10
-1
t 1
G
t 2
= 25 , Peak I
7485
1290
TYP
TYP
617
13
27
56
16
2
9000
1810
MAX
MAX
930
.17
26
54
84
20
40
L
1.0
APL602B2-L
= 49A
UNIT
UNIT
°C/W
pF
ns