APL602LG Microsemi Power Products Group, APL602LG Datasheet - Page 3

• Manufacturer Part Number: APL602LG
• Description: MOSFET N-CH 600V 49A TO-264
• Manufacturer: Microsemi Power Products Group

Specifications of APL602LG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 730W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Typical Performance Curves
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
120
100
80
60
40
20
50
40
30
20
10
80
60
40
20
0
0
0
25
0
0
V
V
V DS > I D (ON) x R DS (ON)MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
DS
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T J = +25°C
T J = +125°C
, GATE-TO-SOURCE VOLTAGE (VOLTS)
V GS =10V, 15 V
T
50
50
2
C
, CASE TEMPERATURE (°C)
100
75
4
150
100
T J = -55°C
6
125
200
8
6.5 V
7.5 V
5.5 V
7 V
6 V
8 V
250
150
10
FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
120
100
80
60
40
20
0
-50
0
0
V
DS
FIGURE 5, R
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
20
I
5
J
D
V
, JUNCTION TEMPERATURE (°C)
NORMALIZED TO
GS
, DRAIN CURRENT (AMPERES)
V GS =10V
= 10V @ 29A
0
10
40
DS
(ON) vs DRAIN CURRENT
15
60
50
V GS =20V
V GS =10, 15V
20
80
8 V
7.5 V
100
7 V
6.5 V
100
25
6 V
5.5 V
120
150
30
APL602B2-L