IRLML6401TRPBF International Rectifier, IRLML6401TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRLML6401TRPBF
• Description: MOSFET P-CH 12V 4.3A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6401TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 830pF @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Channel Type: P
• Current, Drain: -4.3 A
• Gate Charge, Total: 10 nC
• Package Type: Micro3
• Polarization: P-Channel
• Power Dissipation: 1.3 W
• Resistance, Drain To Source On: 0.05 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 250 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 8.6 S
• Voltage, Breakdown, Drain To Source: -12 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±8 V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 4.3 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML6401PBFTR

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100.0
10.0
0.01
100
1.0
0.1
0.1
10
Fig 1. Typical Output Characteristics
1
1.0
0.1
Fig 3. Typical Transfer Characteristics
1.5
-V GS , Gate-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
T J = 25°C
2.0
1
-1.0V
2.5
20µs PULSE WIDTH
Tj = 25°C
V DS = -12V
20µs PULSE WIDTH
T J = 150°C
3.0
10
TOP
BOTTOM -1.0V
3.5
VGS
- 1.8V
-1.5V
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
100
4.0
0.01
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
I =
D
-4.3A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-1.0V
20µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM -1.0V
V
°
GS
=
-4.5V
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
3
100