IRLML6401TRPBF International Rectifier, IRLML6401TRPBF Datasheet - Page 3
![MOSFET P-CH 12V 4.3A SOT-23](/photos/5/48/54881/sot-23-3_sml.jpg)
IRLML6401TRPBF
Manufacturer Part Number
IRLML6401TRPBF
Description
MOSFET P-CH 12V 4.3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRLML6401TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Channel Type
P
Current, Drain
-4.3 A
Gate Charge, Total
10 nC
Package Type
Micro3
Polarization
P-Channel
Power Dissipation
1.3 W
Resistance, Drain To Source On
0.05 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
250 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
8.6 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 4.3 A
Mounting Style
SMD/SMT
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6401PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLML6401TRPBF
Manufacturer:
IR
Quantity:
36 000
Company:
Part Number:
IRLML6401TRPBF
Manufacturer:
IR
Quantity:
3 000
Company:
Part Number:
IRLML6401TRPBF
Manufacturer:
IR
Quantity:
6 000
Company:
Part Number:
IRLML6401TRPBF
Manufacturer:
IR
Quantity:
45
Part Number:
IRLML6401TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML6401TRPBF-1
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML6401TRPBF/F3G
Manufacturer:
IR
Quantity:
20 000
www.irf.com
100.0
10.0
0.01
100
1.0
0.1
0.1
10
Fig 1. Typical Output Characteristics
1
1.0
0.1
Fig 3. Typical Transfer Characteristics
1.5
-V GS , Gate-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
T J = 25°C
2.0
1
-1.0V
2.5
20µs PULSE WIDTH
Tj = 25°C
V DS = -12V
20µs PULSE WIDTH
T J = 150°C
3.0
10
TOP
BOTTOM -1.0V
3.5
VGS
- 1.8V
-1.5V
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
100
4.0
0.01
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
I =
D
-4.3A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-1.0V
20µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM -1.0V
V
°
GS
=
-4.5V
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
3
100