IRLML6401TRPBF International Rectifier, IRLML6401TRPBF Datasheet - Page 4
![MOSFET P-CH 12V 4.3A SOT-23](/photos/5/48/54881/sot-23-3_sml.jpg)
IRLML6401TRPBF
Manufacturer Part Number
IRLML6401TRPBF
Description
MOSFET P-CH 12V 4.3A SOT-23
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRLML6401TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Channel Type
P
Current, Drain
-4.3 A
Gate Charge, Total
10 nC
Package Type
Micro3
Polarization
P-Channel
Power Dissipation
1.3 W
Resistance, Drain To Source On
0.05 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
250 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
8.6 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Drain To Source
–12 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±8 V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 4.3 A
Mounting Style
SMD/SMT
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6401PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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IR
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IR
Quantity:
20 000
4
1200
1000
800
600
400
200
0
100
0.1
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
1
0.2
Drain-to-Source Voltage
T = 150 C
J
Coss
Crss
Ciss
V DS , Drain-to-Source Voltage (V)
-V
SD
Forward Voltage
°
0.6
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
10
J
1.0
f = 1 MHZ
°
1.4
V
GS
SHORTED
= 0 V
1.8
100
1000
100
0.1
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
-4.3A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
°
G
4
, Drain-to-Source Voltage (V)
1
BY R
8
DS(on)
V
DS
=-10V
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10
10us
100us
1ms
10ms
12
16
100