IRLML9301TRPBF International Rectifier, IRLML9301TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML9301TRPBF
• Description: MOSFET P-CH 30V 3.6A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML9301TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 2.4V @ 10µA
• Gate Charge (qg) @ Vgs: 4.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 388pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 103 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3.6 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML9301TRPBF; IRLML9301TRPBFTR

4
10000
1000
100
100
Fig 7. Typical Source-Drain Diode
0.1
10
10
1
Fig 5. Typical Capacitance Vs.
0.3
1
Drain-to-Source Voltage
-V DS , Drain-to-Source Voltage (V)
-V SD , Source-to-Drain Voltage (V)
Forward Voltage
T J = 150°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
C rss
C oss
C iss
f = 1 KHZ
0.7
10
T J = 25°C
0.9
V GS = 0V
100
1.1
0.01
100
0.1
14
12
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0
0
I D = -3.6A
Fig 6. Typical Gate Charge Vs.
T A = 25°C
Tj = 150°C
Single Pulse
-V DS , Drain-to-Source Voltage (V)
2
Gate-to-Source Voltage
V DS = -24V
V DS = -15V
VDS= -6V
Q G , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
4
1
6
1msec
10msec
10
8
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100µsec
10
100
12