IRLML9301TRPBF International Rectifier, IRLML9301TRPBF Datasheet - Page 6

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IRLML9301TRPBF

Manufacturer Part Number
IRLML9301TRPBF
Description
MOSFET P-CH 30V 3.6A SOT-23-3
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLML9301TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
64 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
2.4V @ 10µA
Gate Charge (qg) @ Vgs
4.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
388pF @ 25V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
103 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 3.6 A
Power Dissipation
1.3 W
Mounting Style
SMD/SMT
Gate Charge Qg
4.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML9301TRPBF
IRLML9301TRPBFTR

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Fig 12. Typical On-Resistance Vs. Gate
Id
6
180
140
100
Vgs
60
20
Fig 14a. Gate Charge Waveform
2
4
-V GS, Gate -to -Source Voltage (V)
Qgodr
6
Voltage
8
10
Qgd
12
T J = 25°C
T J = 125°C
Qgs2
14
I D = -3.6A
Vgs(th)
16
Vds
Qgs1
18
20
0
Fig 13. Typical On-Resistance Vs. Drain
500
400
300
200
100
0
Fig 14b. Gate Charge Test Circuit
0
20K
1K
Vgs = -4.5V
5
10
-I D , Drain Current (A)
Current
S
S
15
DUT
Vgs = -10V
20
L
www.irf.com
25
30
VCC
35

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