IRFL024ZTRPBF International Rectifier, IRFL024ZTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFL024ZTRPBF
• Description: MOSFET N-CH 55V 5.1A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024ZTRPBF

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.1A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 57.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
(BR)DSS
GS(th)
SD
2
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
Part not recommended for use above this value.
V
charging time as C
Repetitive rating; pulse width limited by
R
Pulse width
C
(BR)DSS
max. junction temperature. (See fig. 11).
Limited by T
DSS
G
oss
eff.
= 25 , I
.
eff. is a fixed capacitance that gives the same
/ T
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 3.1A, V
1.0ms; duty cycle
, starting T
oss
Parameter
while V
GS
=10V.
Parameter
J
™
= 25°C, L = 2.8mH
DS
is rising from 0 to 80%
2%.
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
6.2
55
0.053
46.2
–––
–––
–––
–––
–––
–––
–––
340
210
–––
–––
–––
9.1
1.9
3.9
7.8
9.8
…
†
‡
ˆ
21
30
23
68
39
55
93
15
Limited by T
This value determined from sample failure population.
100% tested to this value in production.
When mounted on 1 inch square copper board.
When mounted on FR-4 board using minimum
recommended footprint.
repetitive avalanche performance.
57.5
-200
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
5.1
1.3
20
14
41
23
15
V/°C
m
Jmax
µA
nA
nC
nC
ns
pF
ns
V
V
A
V
S
, see Fig.12a, 12b, 15, 16 for typical
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 3.1A
= 3.1A
= 25°C, I
= 25°C, I
= 53
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V
= 28V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 3.1A, V
= 3.1A
= 3.1A, V
= 3.1A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
DD
J
GS
G
= 125°C
= 28V
= 0V
f
e
S
D