IRF7526D1PBF International Rectifier, IRF7526D1PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7526D1PBF
• Description: MOSFET P-CH 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7526D1PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 400 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2 A
• Power Dissipation: 0.8 W
• Gate Charge Qg: 7.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7526D1PbF
6
0.1
10
1
0.0
Fig. 12 -Typical Forward Voltage Drop
Forward Voltage Drop - V
0.2
Forward Voltage Drop - V
Characteristics
0.4
Schottky Diode Characteristics
0.6
T = 150°C
T = 125°C
T = 25°C
J
J
J
F
FM
(V)
0.8
(V)
1.0
0.0001
0.001
0.01
160
140
120
100
100
Fig.14 - Maximum Allowable Ambient
0.1
80
60
40
20
10
0
1
Fig. 13 - Typical Values of Reverse
0.0
Average Forward Current - I
0
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
Current Vs. Reverse Voltage
Temp. Vs. Forward Current
T = 150°C
0.5
J
5
Reverse Voltage - V
100°C
125°C
75°C
50°C
25°C
1.0
10
1.5
15
V = 80% Rated
R
Square wave
r
thJA
2.0
www.irf.com
20
= 100°C/W
R
F(AV)
(V)
2.5
25
DC
(A)
3.0
30
A
A