IRF7526D1PBF International Rectifier, IRF7526D1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF7526D1PBF
• Description: MOSFET P-CH 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7526D1PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 400 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2 A
• Power Dissipation: 0.8 W
• Gate Charge Qg: 7.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7526D1PbF
Re-Applied
Voltage
8
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
GS
Fig
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
SD
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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