IRFL4105PBF International Rectifier, IRFL4105PBF Datasheet
IRFL4105PBF
Specifications of IRFL4105PBF
Related parts for IRFL4105PBF
IRFL4105PBF Summary of contents
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... Thermal Resistance Parameter R Junction-to-Amb. (PCB Mount, steady state)* θJA R Junction-to-Amb. (PCB Mount, steady state)** θJA * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com IRFL4105PbF HEXFET 10V 10V 10V 150 Typ ...
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... IRFL4105PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... TOP BOTTOM 4. 0.1 10 100 Fig 2. Typical Output Characteristics 150°C J 1.0 0.5 = 25V 0.0 A 6.0 6.5 7.0 -60 Fig 4. Normalized On-Resistance IRFL4105PBF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 150 3. -40 ...
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... IRFL4105PbF 1200 1MHz iss rss gd 1000 oss iss 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150° 25° 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED ds 16 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit d(on) Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRFL4105PBF D.U. d(off Notes: 1. Duty factor Peak ...
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... IRFL4105PbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 6 300 15V 250 DRIVER 200 + - V DD 150 A 100 50 V (BR)DSS Starting T , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy I TOP 1.7A 3.0A BOTTOM 3.7A = 25V ...
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... Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ for Logic Level Devices Fig 13. For N-Channel HEXFETS IRFL4105PBF + + P.W. Period V =10V * ...
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... IRFL4105PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 INTERNATIONAL FL014 RECTIFIER LOGO TOP 8 LOT CODE PART NUMBER 314P A = ASSEMBLY SITE DATE CODE CODE (YYWW YEAR WW = WEEK P = DESIGNATES LEAD-FREE ...
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... Data and specifications subject to change without notice. Visit us at www.irf.com for sales contact information. 05/04 IRFL4105PBF 0.35 (.013) 0.25 (.010) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) 50.00 (1.969) MIN. ...